Semiconductor Devices

Fundamental Quantum and Statistical Mechanics of Crystalline Solids.- Charge Transport(Current Flow) in Semiconductors.- Homogeneous(np|pn) and Heterogeneous(Np) Semiconductor Junction Fundamentals.- Basic Heterogeneous Bipolar|Bijunction Transistor(HBT) Properties.- Advanced VBIC and Angelov-Chalmers Models for Homogeneous|Heterogeneous Bipolar|Bijunction Transistor.- Heterogeneous Junction Field Effect Devices – Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor(HEMT).- AlGaAs-GaAs, AlGaN-GaN, SiC HEMT Large Signal Model Equivalent Electrical Circuits(Angelov Chalmers Model) – Normally On|Off HEMT, pHEMT, mHEMT and MODFET.- Homogeneous Junction Bipolar|Bijunction Transistor.- Metal Oxide Semiconductor Field Effect Transistor.- Noise in Semiconductor Devices.- Semiconductor Device Manufacturing Technologies.- Designing Transistors for Specific Applications.- Performance Characteristics of Selected Commercial Transistors and Technology Computer Aided Design(TCAD) Tools.- Semiconductor Optoelectronic Devices.- Gallium Nitride - Reigning King of Ultra High Frequency|Power Transistors.

• Erscheinungsdatum: 20.11.2025
• Autor/Autorin: Amal Banerjee
• Reihe: Synthesis Collection of Technology (R0)
• Format: E-Book
• Dateiformat: PDF
• Kopierschutz: Wasserzeichen
• Dateigröße: 26.1 MB
• Auflage: Second Edition 2026
• Verlag: SPRINGER
• Sprache: Englisch
• Umfang: 445 Seiten
• ISBN: 9783031980442
• Lieferung: Sofort per Download
• Hinweis: Sofort per Download lieferbar. Kein physischer Versand.
• Kompatibilität: Lesbar auf Geräten und Apps mit PDF-Unterstützung.